Please use this identifier to cite or link to this item: http://ena.lp.edu.ua:8080/handle/ntb/5460
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dc.contributor.authorPotera, P.-
dc.contributor.authorUbizskii, S.-
dc.contributor.authorSugak, D.-
dc.contributor.authorSchwartz, K.-
dc.date.accessioned2010-06-17T10:49:39Z-
dc.date.available2010-06-17T10:49:39Z-
dc.date.issued2009-
dc.identifier.citationPotera P. Induced optical absorption of the Gd3Ga5O12 crystal irradiated by high energy 235U ions / P. Potera, S. Ubizskii, D. Sugak, K. Schwartz // Oxide materials for electronic engineering – fabrication, properties and application OMEE-2009 : international scientific workshop, June 22–26, 2009, Lviv, Ukraine : book of abstracts / Lviv Polytechnic National University. – Lviv, 2009. – P. 142.uk_UA
dc.identifier.urihttp://ena.lp.edu.ua:8080/handle/ntb/5460-
dc.language.isoenuk_UA
dc.publisherВидавництво національного університету „Львівська політехніка”uk_UA
dc.subjectGadolinium gallium garnetuk_UA
dc.subjectcolour centres (CC)uk_UA
dc.titleInduced optical absorption of the Gd3Ga5O12 crystal irradiated by high energy 235U ionsuk_UA
dc.typearticleuk_UA
Appears in Collections:Оксидні матеріали електронної техніки – отримання, властивості, застосування. – 2009 р.

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