Please use this identifier to cite or link to this item: http://ena.lp.edu.ua:8080/handle/ntb/42579
Title: Simulation of output current-voltage characteristics of mos transistors formed on «silicon-on insulator» structures
Authors: Kenyo, Halyna
Petrovych, Ihor
Affiliation: Lviv Polytechnic National University
Bibliographic description (Ukraine): Kenyo H. Simulation of output current-voltage characteristics of mos transistors formed on «silicon-on insulator» structures / H. Kenyo, I. Petrovych // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 231–238. – Bibliography: 6 titles.
Journal/Collection: Елементи теорії та прилади твердотілої електроніки
Issue Date: 2002
Publisher: Видавництво Національного університету «Львівська політехніка»
Country (code): UA
Place of the edition/event: Львів
Keywords: SOI MOSFET
“floating substract”
“kink-effect"
current-voltage characteristics
Number of pages: 231–238
Abstract: The current-voltage characteristics of SOI MOS-transistors created in thick (0,5 μm) silicon films by recrystallized laser beam is calculated. A equivalent circuit for computation of drain current includes - MOS-transistor and horizontal bipolar transistor, which form simultaneously in technological process. The peculiarity of formed bipolar transistor is that its base isolated by layers of undergate and insulating oxides. For calculation of the current of the bipolar transistor the potential of “floating substract” (the under-channel region in which the holes accumulated under drain voltage), which causes of sharp increasing of drain current in the range of small drain voltage, is obtained. The characteristics obtained have abrupt current drain region, known as “kink-effect", which can be described as summed influence of both transistors and at the same time the avalanche formation of charge carriers caused by ionisation under influence of strong electric field does not play essential role. Experimental current-voltage characteristics satisfactorily describe by the given model.
URI: http://ena.lp.edu.ua:8080/handle/ntb/42579
Copyright owner: © Halyna Kenyo, Ihor Petrovych, 2002
References (Ukraine): [1] 6 -P. Silicon-on-Insulator Technology: Materials to VLSI. Kluwer Academic Publishers. 1991, 228 p. [2] Edwards S.P., Yallup K.J., De Meyer K.M. Two-dimensional numerical analysis of the floating region in SOI MOSFET's. IEEE Trans. Electron Devices. 1988, v.35, p.1012-1019. [3] Colinge J.P. Reduction of kink effekt in thin-film SOI MOSFET's. IEEE Electron Device Lett. 1988, v.9, p.97-99. 7.8 6 4 . $ . + 7 . " $ 2 # ! " .%+ 6 - # " " " " 8 " - 0 - 1990.- , , 2'-(3 - )(-91. 7,8 ( . " 7 8 , , " 9 % '()( - 5-1 " [6] Hafes I.M., Chibaudo G., Balestra F. Analysis of the kink-effekt in MOS transistors. IEEE Trans. Electron Devices. 1990, v.37, N 3, Pt.1, p.818-821.
Content type: Article
Appears in Collections:Елементи теорії та прилади твердотілої електроніки. – 2002. – №458

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